Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100 (DRIE)

Deep reactive ion etching of Si-based materials Oxford Instruments Plasma Technology PlasmaPro 100
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Guarantor: Mgr. Marek Eliáš, Ph.D.
Technologie / Metodologie: Etching & Deposition
Instrument status: Operational Operational, 13.3.2025 17:02
Equipment placement: CEITEC Nano - C1.34
Výzkumná skupina: CF: CEITEC Nano


Popis:

Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep penetration, steep-sided holes, and trenches in wafers/substrates, typically with high aspect ratios. It was developed for microelectromecha­nical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through silicon via´s (TSV)´s in advanced 3D wafer-level packaging technology.
There are two main technologies for high-rate DRIE: cryogenic and Bosch, although the Bosch process is the only recognized production technique. Both Bosch and cryo processes can fabricate 90° (truly vertical) walls, but often the walls are slightly tapered, e.g. 88° („reentrant“) or 92° („retrograde“).
Another mechanism is sidewall passivation: SiOxFy functional groups (which originate from sulfur hexafluoride and oxygen etch gases) condense on the sidewalls and protect them from lateral etching. As a combination of these processes deep vertical structures can be made.


Publications:

  • Liu, X.; Fohlerová, Z.; Gablech, I.; Pumera, M.; Neužil, P., 2024: Nature-inspired parylene/SiO2 core-shell micro-nano pillars: Effect of topography and surface chemistry. APPLIED MATERIALS TODAY 37, doi: 10.1016/j.apmt.2024.102117; FULL TEXT
    (RIE-FLUORINE, DRIE, PARYLENE-SCS, XEF2)
  • CHMELÍKOVÁ, L.; FECKO, P.; CHMELÍK, J.; SKÁCEL, J.; OTÁHAL, A.; FOHLEROVÁ, Z., 2023: Demolded hollow high aspect-ratio parylene-C micropillars for real-time mechanosensing applications. APPLIED MATERIALS TODAY , p. 1 - 12, doi: 10.1016/j.apmt.2023.101736; FULL TEXT
    (DRIE, PARYLENE-SCS, SUSS-MA8, XEF2)
  • Mahel, V., 2023: Variable MEMS aperture for electron microscopy. MASTER´S THESIS ; FULL TEXT
    (DWL, DRIE, DEKTAK, DIENER, WIRE-BONDER)
  • GABLECH, I.; BRODSKÝ, J.; VYROUBAL, P.; PIASTEK, J.; BARTOŠÍK, M.; PEKÁREK, J., 2022: Mechanical strain and electric-field modulation of graphene transistors integrated on MEMS cantilevers. JOURNAL OF MATERIALS SCIENCE 57(3), p. 1923 - 13, doi: 10.1007/s10853-021-06846-6; FULL TEXT
    (RIE-FLUORINE, DRIE, EVAPORATOR, WIRE-BONDER, WITEC-RAMAN, MPS150, KEITHLEY-4200, SUSS-MA8, DWL)
  • Ondříšková, M., 2022: Analysis and characterisation of spirally–arranged field–emission nanostructure. BACHELOR´S THESIS , p. 1 - 56; FULL TEXT
    (VERIOS, DRIE, KRATOS-XPS)

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Vedení

prof. Ing. Martin Trunec, Dr.
prof. Ing. Martin Trunec, Dr.
Vedoucí výzkumné skupiny
Osobní profil

Zástupce

doc. Ing. Klára Částková, Ph.D.
doc. Ing. Klára Částková, Ph.D.
Senior Researcher
Osobní profil