O akci
Secondary Ion Mass Spectrometry (SIMS) is a very precise surface sensitive analytical technique. A proper interpretation of spectral analysis of secondary ions sputtered from primary ion beam bombardment of the sample allows to determine the elemental and/or isotopic composition of the sample. Layer removal during analysis allows to determine a depth profile. The lateral analysis of the signal allows to create 3D images and cross-section views of the sample. Application of ultra-low impact energy (90-150eV) in SIMS allows to reach sub-nanometer depth resolution. However, typical ion yield for such experiments is very low, resulting in low signal intensity. By optimisation of the primary beam and extraction parameters for the detection of a single type of element in a specific material system, the ion yield is significantly increased and detailed characterization of a material maintaining the sub-nanometer depth resolution becomes possible. This approach is invaluable for characterization of ultra-thin films and 2D materials, and similarly of full device structures, i.e. about 10 µm thick with more than 50 layers. The most recent experiments show that the technique can also be applied to organic materials.
